PTF140451F V1
RF MOSFET LDMOS 28V H-31265-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies GOLDMOS® PTF140451F-V1 is a high-performance LDMOS RF power transistor designed for demanding wireless applications. This component delivers 45W of output power at a frequency of 1.5GHz with a typical gain of 18dB. Optimized for operation at 28V, it features a 550mA test current and a low leakage current of 1µA. The PTF140451F-V1 is housed in an H-31265-2 package, a 2-Flatpack, Fin Leads, Flanged variant, suitable for surface mount applications. This device is commonly utilized in base stations, radar systems, and other communication infrastructure requiring robust RF power amplification.
Additional Information
Series: GOLDMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 1.5GHz |
| Power - Output | 45W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-31265-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 550 mA |
Request a Quote
Clients Also Buy
PTF080101M V1
RF MOSFET LDMOS 28V RFP-10
PTF210101M V1
RF MOSFET LDMOS 28V RFP-10
PTFA081501F V1
RF MOSFET LDMOS 28V H-31248-2
