PTF080101S V1
RF MOSFET LDMOS 28V H-32259-2Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies GOLDMOS® PTF080101S-V1 is a high-performance RF LDMOS transistor designed for demanding wireless infrastructure applications. This surface-mount device operates at 960MHz, delivering 10W of output power with a typical gain of 18.5dB at a test voltage of 28V. It features a 28V rating and a 150mA test current, housed in an H-32259-2 package. The PTF080101S-V1 is suitable for base station equipment, power amplifiers, and other RF power applications where efficiency and reliability are paramount. This component is supplied in Tape & Reel packaging for automated assembly processes.
Additional Information
Series: GOLDMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | H-32259-2 |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 960MHz |
| Power - Output | 10W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-32259-2 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 150 mA |
Request a Quote
Clients Also Buy
PTF080101M V1
RF MOSFET LDMOS 28V RFP-10
PTF210101M V1
RF MOSFET LDMOS 28V RFP-10
PTFA081501F V1
RF MOSFET LDMOS 28V H-31248-2