PTF080101M V1
RF MOSFET LDMOS 28V RFP-10Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies PTF080101M-V1, a GOLDMOS® RF MOSFET, is a high-performance LDMOS device designed for demanding RF applications. This component operates at a rated voltage of 65V with a test voltage of 28V, delivering 10W of output power at 960MHz. It exhibits a gain of 16dB and a test current of 180mA. The PTF080101M-V1 is supplied in a PG-RFP-10 package, a 10-TFSOP, 10-MSOP configuration with a 3.00mm width, suitable for surface mounting. Packaged on tape and reel, this device is utilized in sectors such as wireless communications and industrial RF power amplification.
Additional Information
Series: GOLDMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 10-TFSOP, 10-MSOP (0.118"", 3.00mm Width) |
| Current Rating (Amps) | 1µA |
| Mounting Type | Surface Mount |
| Frequency | 960MHz |
| Power - Output | 10W |
| Gain | 16dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PG-RFP-10 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 180 mA |
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