BG5412KE6327HTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG5412KE6327HTSA1 is an RF MOSFET designed for high-frequency applications. This dual N-channel device, packaged in a PG-SOT363-PO (SOT-363), operates with a drain-source voltage of 8V and is tested at 5V. It exhibits a transconductance of 25mA at 10mA test current and provides 24dB of gain at 800MHz. The component features a noise figure of 1.1dB, making it suitable for demanding RF front-end designs. Its surface mount configuration and small SOT-363 footprint facilitate integration into compact circuit layouts. This RF MOSFET finds application in wireless communication systems and radio frequency identification (RFID) equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.1dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 10 mA |
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