BG5120KE6327HTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG5120KE6327HTSA1 is a dual N-Channel RF MOSFET designed for high-frequency applications. This component operates with a 5V test voltage and a 10mA test current, delivering a gain of 23dB at 800MHz. It features a low noise figure of 1.1dB, making it suitable for sensitive RF front-end designs. The device is housed in a PG-SOT363-PO package, a 6-lead SOT-363 surface-mount configuration ideal for miniaturized circuitry. The BG5120KE6327HTSA1 is commonly employed in wireless communication systems, mobile infrastructure, and other demanding RF circuitry where performance and efficiency are critical. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 20mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 23dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.1dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 10 mA |
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