BG3430RH6327XTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3430RH6327XTSA1 is a dual N-channel RF MOSFET designed for high-frequency applications. This component, housed in a PG-SOT363-PO package, operates with a 5V test voltage and a 14mA test current, delivering a gain of 25dB at 800MHz. Its low noise figure of 1.3dB makes it suitable for sensitive RF front-end designs. The MOSFET technology ensures efficient switching and amplification. This device finds application in wireless communication systems and other RF circuitry requiring robust performance. It is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 25dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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