BG3130RH6327XTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3130RH6327XTSA1 is a dual N-channel RF MOSFET designed for high-frequency applications. This component, housed in a PG-SOT363-PO package, operates at a test voltage of 5V and a rated voltage of 8V, with a typical drain current of 14mA at 800MHz. It offers a gain of 24dB and a noise figure of 1.3dB, making it suitable for demanding RF signal amplification and switching tasks. The surface mount configuration and tape and reel packaging facilitate automated assembly processes. Industries utilizing this device include telecommunications, wireless infrastructure, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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