BG3130RE6327BTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3130RE6327BTSA1 is a high-performance RF MOSFET designed for demanding wireless applications. This dual N-channel device, housed in a compact PG-SOT363-PO package, offers a 5V test voltage and a nominal drain current of 14mA. Operating at 800MHz, it delivers a significant gain of 24dB, making it suitable for amplifier stages. The MOSFET technology ensures efficient switching and amplification. With a low noise figure of 1.3dB, the BG3130RE6327BTSA1 is well-suited for sensitive RF front-end designs. This component finds application in base stations, mobile communications, and other high-frequency wireless infrastructure. The device is supplied in a Tape & Reel (TR) package for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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