BG3130H6327XTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3130H6327XTSA1 is a dual N-channel RF MOSFET designed for high-frequency applications. This component operates with a 5V test voltage and a 14mA test current, delivering a gain of 24dB at 800MHz. Its low noise figure of 1.3dB makes it suitable for sensitive RF front-end designs. Packaged in a PG-SOT363-PO (SOT-363), this surface-mount device is supplied on tape and reel. The BG3130H6327XTSA1 finds application in wireless communication systems and other RF front-end circuitry requiring efficient amplification and low noise. The component is constructed using Metal Oxide technology.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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