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BG3130E6327HTSA1

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BG3130E6327HTSA1

RF MOSFET 5V SOT363

Manufacturer: Infineon Technologies

Categories: RF FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BG3130E6327HTSA1 is a 5V RF MOSFET, configured as dual N-Channel devices within a PG-SOT363-PO package. This component operates at 800MHz, delivering a gain of 24dB with a test current of 14mA. The device exhibits a noise figure of 1.3dB at 5V test voltage. Designed for surface mount applications, it is supplied on a tape and reel. This RF MOSFET is suitable for use in radio frequency applications across various industries including telecommunications and consumer electronics. Its consistent performance and robust design cater to demanding RF circuit requirements.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VSSOP, SC-88, SOT-363
Current Rating (Amps)25mA
Mounting TypeSurface Mount
Frequency800MHz
Configuration2 N-Channel (Dual)
Power - Output-
Gain24dB
TechnologyMOSFET (Metal Oxide)
Noise Figure1.3dB
Supplier Device PackagePG-SOT363-PO
Voltage - Rated8 V
Voltage - Test5 V
Current - Test14 mA

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