BG3123RH6327XTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3123RH6327XTSA1 is a dual N-channel RF MOSFET designed for high-frequency applications. This component, housed in a PG-SOT363-PO package, operates with a 5V test voltage and a 14mA test current. It exhibits a gain of 25dB at 800MHz, making it suitable for RF amplification stages. The device features a noise figure of 1.8dB, crucial for maintaining signal integrity in sensitive receiver designs. With a rated voltage of 8V, it offers robust performance in demanding RF circuits. Applications span across wireless communication infrastructure, mobile devices, and other systems requiring efficient RF power management. The component is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA, 20mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 25dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.8dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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