BG3123RE6327HTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG3123RE6327HTSA1 is an RF MOSFET designed for high-frequency applications. This component features a 5V gate-source voltage rating and operates with a drain current of 14mA at 800MHz. It delivers a gain of 25dB, making it suitable for signal amplification in demanding radio frequency systems. The device is housed in a compact PG-SOT363-PO package, facilitating surface mount assembly. Key parameters include a noise figure of 1.8dB and a rated voltage of 8V. This RF MOSFET is utilized in industries such as telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA, 20mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 25dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.8dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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