BG3123E6327HTSA1
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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The Infineon Technologies BG3123E6327HTSA1 is a high-frequency RF MOSFET designed for demanding applications. This dual N-channel device, housed in a compact PG-SOT363-PO package, operates within the 800MHz spectrum. Key specifications include a test voltage of 5V, a test current of 14mA, and a significant gain of 25dB. The noise figure is rated at a low 1.8dB, ensuring signal integrity in sensitive circuits. This surface-mount component is suitable for high-volume manufacturing, supplied in tape and reel packaging. Its performance characteristics make it well-suited for use in telecommunications infrastructure, wireless communication systems, and other RF power amplifier designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA, 20mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 25dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.8dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
| Current - Test | 14 mA |
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