BG 5130R E6327
RF MOSFET 3V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BG-5130R-E6327 is a dual N-Channel RF MOSFET designed for high-frequency applications. This component, housed in a PG-SOT363-PO package, operates with a gate-source voltage of 3V and a drain current of 10mA for testing. It exhibits a gain of 24dB at 800MHz, with a rated voltage of 8V. The device features a low noise figure of 1.3dB, making it suitable for demanding RF front-end circuitry. Mounting is via surface mount technology, and it is supplied on tape and reel. Applications for this RF MOSFET include wireless communication systems and other radio frequency designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 3 V |
| Current - Test | 10 mA |
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