BG 3230 E6327
RF MOSFET 5V SOT363Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BG-3230-E6327 is a dual N-channel RF MOSFET designed for high-frequency applications. This component operates at 800MHz and delivers a gain of 24dB, with a test voltage of 5V and a rated voltage of 8V. It features a low noise figure of 1.3dB, making it suitable for sensitive RF signal processing. The device is housed in a PG-SOT363-PO package, a 6-pin SOT-363 (SC-88, 6-VSSOP) configuration, suitable for surface mounting. The current rating is 25mA. This RF MOSFET is utilized in various demanding sectors including wireless communications and consumer electronics. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | 2 N-Channel (Dual) |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT363-PO |
| Voltage - Rated | 8 V |
| Voltage - Test | 5 V |
Request a Quote
Clients Also Buy
BF 5030R E6327
RF MOSFET 3V SOT143R
PTFA181001EV4R250XTMA1
RF MOSFET LDMOS 28V H-36248-2
PTFB212507SHV1R250XTMA1
RF MOSFET LDMOS