BF999E6433HTMA1
RF MOSFET 10V SOT23Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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The Infineon Technologies BF999E6433HTMA1 is an RF MOSFET designed for high-frequency applications. This N-Channel device, housed in a PG-SOT23 package, operates with a drain-source voltage of up to 20V and features a 10V test voltage. The BF999E6433HTMA1 exhibits a typical gain of 27dB at 45MHz, with a tested drain current of 10mA and a current rating of 30mA. Its low noise figure of 2.1dB makes it suitable for sensitive RF circuitry. This component finds application in wireless communication systems and various RF front-end designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Current Rating (Amps) | 30mA |
| Mounting Type | Surface Mount |
| Frequency | 45MHz |
| Configuration | N-Channel |
| Power - Output | - |
| Gain | 27dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 2.1dB |
| Supplier Device Package | PG-SOT23 |
| Voltage - Rated | 20 V |
| Voltage - Test | 10 V |
| Current - Test | 10 mA |
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