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BF998E6327HTSA1

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BF998E6327HTSA1

RF MOSFET 8V SOT143

Manufacturer: Infineon Technologies

Categories: RF FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies BF998E6327HTSA1 is an RF MOSFET designed for high-frequency applications. This N-Channel device, housed in a PG-SOT-143-3D package, operates with a drain-source voltage rating of 12V and a test voltage of 8V. It exhibits a typical drain current of 10mA at 45MHz, with a specified current rating of 30mA. The component delivers a gain of 28dB and features a noise figure of 2.8dB. Mounting is facilitated via a surface mount configuration. This RF MOSFET is utilized in telecommunications and wireless infrastructure. The BF998E6327HTSA1 is supplied on a Tape & Reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Current Rating (Amps)30mA
Mounting TypeSurface Mount
Frequency45MHz
ConfigurationN-Channel
Power - Output-
Gain28dB
TechnologyMOSFET (Metal Oxide)
Noise Figure2.8dB
Supplier Device PackagePG-SOT-143-3D
Voltage - Rated12 V
Voltage - Test8 V
Current - Test10 mA

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