BF5030WE6327HTSA1
RF MOSFET 3V SOT343Manufacturer: Infineon Technologies
Categories: RF FETs, MOSFETs
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Infineon Technologies BF5030WE6327HTSA1 is an N-Channel RF MOSFET designed for high-frequency applications. This device operates with a 3V test voltage and a 10mA test current, achieving a gain of 24dB at 800MHz. The BF5030WE6327HTSA1 features a low noise figure of 1.3dB, making it suitable for sensitive receiver front-ends. Packaged in a PG-SOT343-3D (SC-82A) surface-mount configuration, it is supplied on tape and reel. This RF MOSFET is utilized in wireless communication systems and other demanding RF circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Current Rating (Amps) | 25mA |
| Mounting Type | Surface Mount |
| Frequency | 800MHz |
| Configuration | N-Channel |
| Power - Output | - |
| Gain | 24dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | 1.3dB |
| Supplier Device Package | PG-SOT343-3D |
| Voltage - Rated | 8 V |
| Voltage - Test | 3 V |
| Current - Test | 10 mA |
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