BAT1704WE6327HTSA1
DIODE SCHOTTKY 4V 150MW SOT323-3Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAT1704WE6327HTSA1 is a Schottky diode designed for high-frequency applications. This component features a series connection of two Schottky diodes within a single PG-SOT323 package, offering a reverse voltage rating of 4V and a maximum forward current of 130 mA. With a power dissipation of 150 mW and a junction temperature capability of 150°C, it is suitable for demanding operating environments. The diode exhibits a low capacitance of 0.75pF @ 0V, 1MHz, and a low forward resistance of 15 Ohm @ 5mA, 10kHz, making it ideal for RF switching and detection circuits. Applications span wireless communication systems, radar, and general-purpose RF front-end designs. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Diode Type | Schottky - 1 Pair Series Connection |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.75pF @ 0V, 1MHz |
| Resistance @ If, F | 15Ohm @ 5mA, 10kHz |
| Voltage - Peak Reverse (Max) | 4V |
| Supplier Device Package | PG-SOT323 |
| Current - Max | 130 mA |
| Power Dissipation (Max) | 150 mW |
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