BAT1502LSE6433XTMA1
DIODE SCHOTT 4V 110MA TSSLP-2-3Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAT1502LSE6433XTMA1 is a single Schottky diode designed for high-frequency applications. This component features a maximum reverse voltage of 4V and a continuous forward current of 110 mA, with a maximum power dissipation of 100 mW. Its low junction capacitance of 0.23pF at 0V and 1MHz, coupled with a low forward resistance of 10 Ohms at 50mA and 1MHz, makes it suitable for demanding RF circuits. The device operates at junction temperatures up to 150°C and is housed in a compact PG-TSSLP-2-3 package, equivalent to a 0201 (0603 Metric) footprint. This RF diode is commonly utilized in wireless communication systems, mobile devices, and other high-frequency signal processing applications. Supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 0201 (0603 Metric) |
| Diode Type | Schottky - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.23pF @ 0V, 1MHz |
| Resistance @ If, F | 10Ohm @ 50mA, 1MHz |
| Voltage - Peak Reverse (Max) | 4V |
| Supplier Device Package | PG-TSSLP-2-3 |
| Current - Max | 110 mA |
| Power Dissipation (Max) | 100 mW |
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