BAR90098LRHE6327XTSA1
RF DIODE PIN 80V 250MW TSLP-4-7Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR90098LRHE6327XTSA1 is a high-performance PIN diode designed for demanding RF applications. This component features two independent PIN diodes within a compact PG-TSLP-4-7 package, offering excellent switching speed and low distortion. With a maximum reverse voltage of 80V and a continuous forward current capability of 100 mA, it is suitable for high-power switching and modulation tasks. The diode exhibits a typical capacitance of 0.35pF at 1V and 1MHz, and a low on-resistance of 800mOhm at 10mA and 100MHz, ensuring minimal signal loss. Its maximum power dissipation is rated at 250 mW, and it operates reliably across an extended temperature range up to 150°C (TJ). This device finds application in various sectors including telecommunications, radar systems, and electronic countermeasures. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFDFN |
| Diode Type | PIN - 2 Independent |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
| Resistance @ If, F | 800mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSLP-4-7 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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