BAR9002LSE6327XTSA1
RF DIODE PIN 80V 150MW TSSLP-2Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR9002LSE6327XTSA1 is a single PIN RF diode designed for demanding RF switching applications. This component features a maximum reverse voltage of 80V and a continuous forward current capability of 100 mA. With a low capacitance of 0.35pF at 1V and 1MHz, and a low on-state resistance of 800mOhm at 10mA and 100MHz, it offers excellent performance for high-frequency signal path control. The diode can dissipate up to 150 mW of power and operates across a wide temperature range, up to 150°C. Supplied in the compact PG-TSSLP-2-1 package, equivalent to a 0201 (0603 Metric) footprint, it is ideal for space-constrained designs. This device is commonly utilized in base station infrastructure, defense and aerospace, and satellite communications. The BAR9002LSE6327XTSA1 is available on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 0201 (0603 Metric) |
| Diode Type | PIN - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
| Resistance @ If, F | 800mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSSLP-2-1 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 150 mW |
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