BAR9002LRHE6327XTSA1
RF DIODE PIN 80V 250MW TSLP-2Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR9002LRHE6327XTSA1 is a single PIN RF diode designed for high-frequency applications. This component offers a maximum reverse voltage of 80V and can handle a forward current of up to 100 mA. With a power dissipation capability of 250 mW and an operating junction temperature of 150°C, it is suitable for demanding environments. The diode exhibits a typical capacitance of 0.35pF at 1V and 1MHz, and a resistance of 800mOhm at 10mA and 100MHz, indicating efficient switching characteristics. Packaged in a compact PG-TSLP-2-7 (SOD-882 equivalent) on tape and reel, the BAR9002LRHE6327XTSA1 finds utility in wireless infrastructure, satellite communications, and test and measurement equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Diode Type | PIN - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
| Resistance @ If, F | 800mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSLP-2-7 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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