BAR9002ELSE6327XTSA1
RF DIODE PIN 80V 250MW TSSLP-2Manufacturer: Infineon Technologies
Categories: RF Diodes
Quality Control: Learn More
Infineon Technologies BAR9002ELSE6327XTSA1 is a single PIN RF diode designed for high-frequency applications. This component features a reverse voltage rating of 80V and a maximum forward current handling capability of 100 mA. With a power dissipation of 250 mW, it is suitable for demanding RF switching and attenuation circuits. The diode exhibits a low capacitance of 0.35pF at 1V and 1MHz, and a resistance of 800mOhm at 10mA and 100MHz, ensuring excellent signal integrity. Packaged in a compact PG-TSSLP-2-3 (0201 Metric) surface-mount package, this device is supplied on tape and reel for efficient automated assembly. The BAR9002ELSE6327XTSA1 is utilized in various industries, including telecommunications and radar systems, where reliable RF performance is critical. It operates across a wide temperature range, up to 150°C junction temperature.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 0201 (0603 Metric) |
| Diode Type | PIN - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
| Resistance @ If, F | 800mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSSLP-2-3 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
Request a Quote
Clients Also Buy
BAT15-099E6327
BAT15 - RF MIXER AND DETECTOR SC
BAT1504WE6327BTSA1
DIODE SCHOTTKY 4V 100MW SOT323-3
BA 892 E6433
RF DIODE STANDARD 35V SCD80
