BAR8802LRHE6327XTSA1
RF DIODE PIN 80V 250MW TSLP-2Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR8802LRHE6327XTSA1 is a single PIN RF diode designed for high-frequency applications. This component features a maximum reverse voltage of 80V and a continuous forward current handling capability of 100 mA. With a power dissipation rating of 250 mW, it is suitable for demanding RF switching and signal attenuation tasks. The diode exhibits a typical low capacitance of 0.4pF at 1V and 1MHz, crucial for maintaining signal integrity in RF circuits. Its low forward resistance of 600mOhm at 10mA and 100MHz ensures efficient signal transmission. Operating at temperatures up to 150°C (TJ), this diode is packaged in a compact PG-TSLP-2-7 (SOD-882 equivalent) and supplied on tape and reel. Industries utilizing this component include telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Diode Type | PIN - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.4pF @ 1V, 1MHz |
| Resistance @ If, F | 600mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSLP-2-7 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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