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BAR6305WE6327HTSA1

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BAR6305WE6327HTSA1

RF DIODE PIN 50V 250MW SOT323-3

Manufacturer: Infineon Technologies

Categories: RF Diodes

Quality Control: Learn More

Infineon Technologies BAR6305WE6327HTSA1 is a PIN RF diode featuring a common cathode configuration. This device is rated for a peak reverse voltage of 50V and a maximum continuous forward current of 100 mA, with a maximum power dissipation of 250 mW. The diode exhibits a low capacitance of 0.3pF at 5V and 1MHz, and a low resistance of 1 Ohm at 10mA and 100MHz, characteristic of its PIN structure. Manufactured in a compact PG-SOT323 (SC-70) package, this component is supplied on tape and reel. Its performance characteristics make it suitable for applications in RF switching and signal modulation within the telecommunications and wireless infrastructure industries. The operating junction temperature range extends to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Diode TypePIN - 1 Pair Common Cathode
Operating Temperature150°C (TJ)
Capacitance @ Vr, F0.3pF @ 5V, 1MHz
Resistance @ If, F1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max)50V
Supplier Device PackagePG-SOT323
Current - Max100 mA
Power Dissipation (Max)250 mW

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