BAR6302LE6433XT
RF DIODE PIN 50V 250MW TSLP-2Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR6302LE6433XT is a single PIN RF diode designed for high-frequency applications. This component features a maximum reverse voltage of 50V and a continuous forward current of 100 mA. With a maximum power dissipation of 250 mW, it is suitable for demanding RF switching and attenuator circuits. The diode exhibits a low capacitance of 0.3pF at 5V and 1MHz, and a low resistance of 1 Ohm at 10mA and 100MHz, ensuring efficient signal handling. Operating at temperatures up to 150°C (TJ), the BAR6302LE6433XT is housed in a compact PG-TSLP-2-1 package, commonly utilized in wireless infrastructure, automotive radar systems, and satellite communication equipment. Supplied on tape and reel, this Infineon Technologies PIN diode is engineered for robust performance in challenging RF environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Diode Type | PIN - Single |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.3pF @ 5V, 1MHz |
| Resistance @ If, F | 1Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | PG-TSLP-2-1 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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