BAR61E6327HTSA1
RF DIODE PIN 100V 250MW SOT143Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR61E6327HTSA1 is a PIN diode designed for RF applications. This component features a PI element structure and is rated for a peak reverse voltage of 100V. It can handle a maximum forward current of 140 mA and a maximum power dissipation of 250 mW. The diode exhibits a typical forward resistance of 12 Ohms at 10 mA and 100 MHz, and a capacitance of 0.5 pF at 50V and 1 MHz. Operating at junction temperatures up to 150°C, the BAR61E6327HTSA1 is housed in a SOT143 (TO-253-4, TO-253AA) package and supplied on tape and reel. This component is widely utilized in wireless infrastructure, radar systems, and satellite communications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Diode Type | PIN - PI Element |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.5pF @ 50V, 1MHz |
| Resistance @ If, F | 12Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 100V |
| Current - Max | 140 mA |
| Power Dissipation (Max) | 250 mW |
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