BAR 90-099LRH E6327
RF DIODE PIN 80V 250MW TSLP-4-7Manufacturer: Infineon Technologies
Categories: RF Diodes
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Infineon Technologies BAR-90-099LRH-E6327 is a high-performance RF PIN Diode designed for demanding applications. This component features two independent PIN diodes within a compact PG-TSLP-4-7 package, ideal for space-constrained designs. With a maximum reverse voltage of 80V and a continuous forward current capability of 100 mA, it offers robust performance. The device boasts a low capacitance of 0.35pF at 1V and 1MHz, along with a low on-resistance of 800mOhm at 10mA and 100MHz, ensuring excellent signal integrity. Its maximum power dissipation is rated at 250 mW, and it operates reliably across a wide temperature range up to 150°C (TJ). This RF diode is commonly utilized in applications such as cellular infrastructure, radar systems, and wireless communication modules. Supplied on tape and reel, the BAR-90-099LRH-E6327 is packaged in a 4-XFDFN footprint.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFDFN |
| Diode Type | PIN - 2 Independent |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 1V, 1MHz |
| Resistance @ If, F | 800mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSLP-4-7 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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