BAR 88-099LRH E6327
RF DIODE PIN 80V 250MW TSLP-4-7Manufacturer: Infineon Technologies
Categories: RF Diodes
Quality Control: Learn More
Infineon Technologies BAR-88-099LRH-E6327 is a PIN diode component designed for high-frequency applications. This device features two independent PIN diodes within a PG-TSLP-4-7 package, commonly known as 4-XFDFN. It supports a maximum reverse voltage of 80V and can handle a continuous forward current of up to 100 mA. The power dissipation capability is rated at 250 mW. At 100 MHz and 10 mA forward current, the on-state resistance is 600 mOhms. The diode exhibits a low junction capacitance of 0.4 pF at 1V and 1 MHz. Operating temperature range extends to 150°C (TJ). This component is suitable for use in wireless communication systems, radar, and other RF switching applications. The BAR-88-099LRH-E6327 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFDFN |
| Diode Type | PIN - 2 Independent |
| Operating Temperature | 150°C (TJ) |
| Capacitance @ Vr, F | 0.4pF @ 1V, 1MHz |
| Resistance @ If, F | 600mOhm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 80V |
| Supplier Device Package | PG-TSLP-4-7 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
Request a Quote
Clients Also Buy
BAT15-099E6327
BAT15 - RF MIXER AND DETECTOR SC
BAT1504WE6327BTSA1
DIODE SCHOTTKY 4V 100MW SOT323-3
BA 892 E6433
RF DIODE STANDARD 35V SCD80
