BGA5M1BN6E6327XTSA1
IC AMP LTE 1.805GHZ-2.2GHZ TSNP6Manufacturer: Infineon Technologies
Categories: RF Amplifiers
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Infineon Technologies BGA5M1BN6E6327XTSA1 is a high-performance RF amplifier designed for LTE applications within the 1.805GHz to 2.2GHz frequency band. This surface mount component, housed in a 6-XFDFN package (PG-TSNP-6-10), offers a typical gain of 19.3dB at 2GHz. Optimized for efficiency, it operates with a low supply current of 9.5mA and a voltage range of 1.5V to 3.6V. The amplifier exhibits a low noise figure of 0.65dB, ensuring excellent signal integrity. Its P1dB compression point is -17dBm at 2GHz, making it suitable for demanding wireless communication systems. This device is commonly utilized in base stations, mobile devices, and other wireless infrastructure where precise amplification of LTE signals is critical. Supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFDFN |
| Mounting Type | Surface Mount |
| Frequency | 1.805GHz ~ 2.2GHz |
| RF Type | LTE |
| Voltage - Supply | 1.5V ~ 3.6V |
| Gain | 19.3dB |
| Current - Supply | 9.5mA |
| Noise Figure | 0.65dB |
| P1dB | -17dBm |
| Test Frequency | 2GHz |
| Supplier Device Package | PG-TSNP-6-10 |
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