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S80KS5122GABHI020

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S80KS5122GABHI020

IC PSRAM 512MBIT HYPERBUS 24FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies' S80KS5122GABHI020 is a 512Mbit HYPERRAM™ pseudo-SRAM device featuring a HyperBus interface. Operating at a 200 MHz clock frequency with an access time of 35 ns, this memory component is organized as 64M x 8. It supports a supply voltage range of 1.7V to 2V and operates within an ambient temperature range of -40°C to 85°C. The device is housed in a compact 24-FBGA (6x8) surface-mount package, supplied in trays. This component is well-suited for high-performance applications in automotive, industrial, and consumer electronics sectors requiring low-power, high-speed volatile memory.

Additional Information

Series: HYPERRAM™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case24-VBGA
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 2V
TechnologyPSRAM (Pseudo SRAM)
Clock Frequency200 MHz
Memory FormatPSRAM
Supplier Device Package24-FBGA (6x8)
Write Cycle Time - Word, Page35ns
Memory InterfaceHyperBus
Access Time35 ns
Memory Organization64M x 8
ProgrammableNot Verified

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