S72XS256RE0AHBH10
IC FLASH RAM 256MBIT PAR 133FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S72XS256RE0AHBH10 is a high-performance memory component from the XS-R series. This device integrates 256Mbit of NOR Flash memory and 256Mbit of DDR DRAM, offering a combined 512Mbit capacity. It features a parallel interface operating at a 108 MHz clock frequency, enabling efficient data transfer. The component is housed in a compact 133-FBGA (8x8) package, suitable for surface mount applications. Designed for demanding environments, it operates across a temperature range of -25°C to 85°C and a supply voltage of 1.7V to 1.95V. This memory solution is commonly utilized in automotive, industrial automation, and telecommunications sectors where robust and high-speed memory is critical. Its dual-memory architecture provides flexibility for code execution and data storage in embedded systems.
Additional Information
Series: XS-RRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 133-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 256Mbit (FLASH), 256Mbit (DDR DRAM) |
| Memory Type | Non-Volatile, Volatile |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | FLASH, DRAM |
| Clock Frequency | 108 MHz |
| Memory Format | FLASH, RAM |
| Supplier Device Package | 133-FBGA (8x8) |
| Write Cycle Time - Word, Page | - |
| Memory Interface | Parallel |
| Memory Organization | - |
| Programmable | Not Verified |
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