S29GL512T12DHVV23
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL512T12DHVV23 is a 512Mbit NOR Flash memory device from the GL-T series. This non-volatile memory component features a parallel interface and a memory organization of 64M x 8 bits. With an access time of 120 ns and a write cycle time of 60 ns (word/page), it offers efficient data access and manipulation. The device operates within a supply voltage range of 1.65V to 3.6V and is designed for operation across an industrial temperature range of -40°C to 105°C. Supplied in a 64-FBGA (9x9) package, this surface-mount component is suitable for applications in automotive, industrial, and communication systems requiring robust and reliable non-volatile storage. The S29GL512T12DHVV23 is presented on a Tape & Reel (TR) for high-volume manufacturing.
Additional Information
Series: GL-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
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