S29GL512T11FHIV10
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL512T11FHIV10, a NOR Flash memory component from the GL-T series, offers a 512Mbit storage capacity. This non-volatile memory utilizes a parallel interface for data access, with an access time of 110 ns and a word/page write cycle time of 60 ns. The device operates within a supply voltage range of 1.65V to 3.6V and is specified for an operating temperature range of -40°C to 85°C. Packaged in a 64-FBGA (13x11) surface-mount configuration, this component is suitable for demanding applications across the automotive, industrial, and telecommunications sectors. Its robust design and reliable performance make it a key element in embedded systems requiring persistent data storage.
Additional Information
Series: GL-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (13x11) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 64M x 8 |
| Programmable | Verified |