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S29GL512T11DHB010

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S29GL512T11DHB010

IC FLASH 512MBIT PARALLEL 64FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies S29GL512T11DHB010 is a 512Mbit NOR Flash memory component from the GL-T series. This non-volatile memory features a parallel interface with an access time of 110 ns and a word/page write cycle time of 60 ns. The memory organization is 64M x 8. It operates from a supply voltage of 2.7V to 3.6V and is designed for surface mounting. The device is housed in a 64-FBGA (9x9) package and operates within an ambient temperature range of -40°C to 105°C. This component is utilized in demanding applications across various industries including industrial automation, automotive, and telecommunications where reliable data storage and fast read access are critical.

Additional Information

Series: GL-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case64-LBGA
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package64-FBGA (9x9)
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time110 ns
Memory Organization64M x 8
ProgrammableNot Verified

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