S29GL512S12TFBV10
IC FLASH 512MBIT PARALLEL 56TSOPManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies' S29GL512S12TFBV10 is a 512Mbit NOR Flash memory device from the GL-S series. This non-volatile memory features a parallel interface and a memory organization of 32M x 16. With an access time of 120 ns and a word/page write cycle time of 60 ns, it is suitable for applications requiring fast read and write operations. The component operates within a supply voltage range of 1.65V to 3.6V and supports an industrial operating temperature range of -40°C to 105°C. Packaged in a 56-TSOP surface-mount configuration, specifically a 56-TFSOP (0.724", 18.40mm Width), this device finds utility in various sectors including automotive, industrial control, and embedded systems.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 56-TFSOP (0.724"", 18.40mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 56-TSOP |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
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