S29GL512S12DHBV10
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL512S12DHBV10 is a 512Mbit NOR Flash memory device from the GL-S series. This non-volatile memory component features a parallel interface with an access time of 120 ns and a write cycle time of 60 ns (word/page). The memory organization is 32M x 16, and it operates within a supply voltage range of 1.65V to 3.6V. Designed for surface mounting, this component is housed in a 64-FBGA (9x9) package. It is suitable for applications requiring reliable, high-density non-volatile storage, including industrial automation, automotive systems, and consumer electronics. The operating temperature range is -40°C to 105°C (TA).
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |