S29GL512S11DHSS20
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies GL-S series NOR Flash memory, part number S29GL512S11DHSS20, offers 512Mbit of non-volatile storage with a parallel interface. This device features an access time of 110 ns and a word/page write cycle time of 60 ns, supporting a voltage range of 2.7V to 3.6V. The memory organization is 32M x 16, and it is housed in a compact 64-FBGA (9x9) surface-mount package. Operating within a temperature range of 0°C to 85°C, this memory component is suitable for applications in industrial automation, consumer electronics, and automotive systems requiring reliable data storage.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |