S29GL512S11DHSS10
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL512S11DHSS10 is a 512Mbit NOR Flash memory device featuring a parallel interface. This non-volatile memory component, part of the GL-S series, offers a 32M x 16 memory organization with an asynchronous access time of 110 ns. Designed for surface mount applications, it is supplied in a 64-FBGA (9x9) package. The device operates within a voltage range of 2.7V to 3.6V and has a word/page write cycle time of 60 ns. This component is suitable for demanding applications in the automotive and industrial sectors requiring reliable data storage.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
S29GL064S70TFI070
IC FLASH 64MBIT PARALLEL 56TSOP
S29GL512S10TFI010
IC FLASH 512MBIT PARALLEL 56TSOP
S29GL01GS11FHIV23
IC FLASH 1GBIT PARALLEL 64FBGA
