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S29GL512S11DHB023

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S29GL512S11DHB023

IC FLASH 512MBIT PARALLEL 64FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies' GL-S series S29GL512S11DHB023 is a 512Mbit NOR Flash memory device designed for high-performance applications. Featuring a parallel interface, this component offers an access time of 110 ns and a write cycle time of 60 ns for word/page operations. The memory organization is 32M x 16, providing ample capacity for data storage. This non-volatile memory is housed in a 64-FBGA (9x9) package suitable for surface mounting. Operating within a supply voltage range of 2.7V to 3.6V, it maintains functionality across an industrial temperature range of -40°C to 105°C. This device is commonly utilized in automotive, industrial control, and communication systems. The S29GL512S11DHB023 is supplied in Tape & Reel packaging.

Additional Information

Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case64-LBGA
Mounting TypeSurface Mount
Memory Size512Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package64-FBGA (9x9)
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time110 ns
Memory Organization32M x 16
ProgrammableNot Verified

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