S29GL512S11DHB013
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL512S11DHB013, a NOR Flash memory component from the GL-S series, offers 512Mbit of non-volatile storage. This device features a parallel interface with a memory organization of 32M x 16 and an access time of 110 ns. Designed for surface mounting, it utilizes a 64-FBGA (9x9) package and operates within a voltage range of 2.7V to 3.6V. The write cycle time for a word or page is 60 ns. This component is qualified to AEC-Q100 standards and operates across an automotive temperature range of -40°C to 105°C. It finds application in automotive and industrial systems requiring reliable, high-density non-volatile memory. The product is supplied in Tape & Reel packaging.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |