S29GL512S11DHAV23
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL512S11DHAV23 is a 512Mbit NOR Flash memory device from the GL-S series. This non-volatile memory utilizes a parallel interface for data access, offering a 32M x 16 memory organization. With an access time of 110 ns and a write cycle time of 60 ns per word/page, it is suitable for applications requiring rapid read and write operations. The device operates within a voltage range of 1.65V to 3.6V and is designed for surface mounting in a 64-FBGA (9x9) package. Operating temperature ranges from -40°C to 85°C. This component finds application in automotive, industrial, and communication systems.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
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