S29GL512S11DHA010
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL512S11DHA010 is an advanced NOR Flash memory component from the GL-S series. This high-density 512Mbit device offers a parallel interface for efficient data access, with an access time of 110 ns. Its memory organization is structured as 32M x 16, providing ample capacity for demanding applications. Designed for surface mounting, the component is housed in a compact 64-FBGA (9x9) package, ensuring a reduced footprint on printed circuit boards. The operating temperature range of -40°C to 85°C (TA) and AEC-Q100 qualification make it suitable for automotive environments. With a supply voltage range of 2.7V to 3.6V and a word/page write cycle time of 60 ns, this non-volatile memory solution is engineered for reliability and performance in automotive and industrial sectors.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 32M x 16 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |
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