S29GL512N10FFA010
IC FLASH 512MBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL512N10FFA010 is a 512Mbit Parallel NOR Flash memory device from the GL-N series. This non-volatile memory features a parallel interface with an access time of 100 ns. The memory organization is configurable as 64M x 8 or 32M x 16. Designed for surface mount applications, it is supplied in a 64-FBGA (13x11) package. Operating within a supply voltage range of 2.7V to 3.6V, this component is AEC-Q100 qualified and rated for automotive grade applications, with an operating temperature range of -40°C to 85°C. Its write cycle time for words and pages is also 100ns. This device is suitable for demanding automotive, industrial, and high-reliability applications requiring robust non-volatile storage.
Additional Information
Series: GL-NRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (13x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 64M x 8, 32M x 16 |
| Programmable | Verified |
| Qualification | AEC-Q100 |
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