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S29GL128S11DHBV10

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S29GL128S11DHBV10

IC FLASH 128MBIT PARALLEL 64FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies S29GL128S11DHBV10 is a 128Mbit Parallel NOR Flash memory device from the GL-S series. This non-volatile memory offers a 110 ns access time and a 60 ns word/page write cycle time. Its parallel interface supports 8M x 16 memory organization, making it suitable for applications requiring high-speed data access and program/erase operations. The device operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of -40°C to 105°C. Supplied in a 64-FBGA (9x9) surface-mount package, the S29GL128S11DHBV10 is utilized in industrial, automotive, and communication infrastructure.

Additional Information

Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case64-LBGA
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package64-FBGA (9x9)
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time110 ns
Memory Organization8M x 16
ProgrammableNot Verified

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