S29GL01GT11FHB023
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
Quality Control: Learn More
Infineon Technologies S29GL01GT11FHB023, a 1Gbit NOR Flash memory device, provides a 128M x 8 organization with a parallel interface. This automotive-grade component features an access time of 110 ns and a write cycle time of 60 ns. Operating across a voltage range of 1.65V to 3.6V, it is suitable for demanding applications within the automotive and industrial sectors. The device is housed in a 64-FBGA (13x11) package and is supplied on tape and reel. Its non-volatile memory technology ensures reliable data storage under challenging environmental conditions, with an operating temperature range of -40°C to 85°C. The S29GL01GT11FHB023 meets AEC-Q100 qualification standards.
Additional Information
Series: GL-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (13x11) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |