S29GL01GT11DHB023
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL01GT11DHB023 is a 1Gbit NOR Flash memory device featuring a parallel interface. This component, part of the GL-T series, offers an access time of 110 ns and a write cycle time of 60 ns. Designed for demanding applications, it operates with a supply voltage range of 2.7V to 3.6V. The memory is organized as 128M x 8 and is housed in a compact 64-FBGA (9x9) package, suitable for surface mount configurations. This AEC-Q100 qualified device is engineered for automotive applications, ensuring reliability in harsh environmental conditions with an operating temperature range of -40°C to 105°C. The S29GL01GT11DHB023 is typically utilized in automotive infotainment systems, advanced driver-assistance systems (ADAS), and industrial control systems where robust, high-density non-volatile storage is critical. It is supplied in Tape & Reel packaging.
Additional Information
Series: GL-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Grade | Automotive |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 110 ns |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
| Qualification | AEC-Q100 |