S29GL01GS12DHVV13
IC FLASH 1GBIT PARALLEL 64FBGAManufacturer: Infineon Technologies
Categories: Memory
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Infineon Technologies S29GL01GS12DHVV13 is a 1 Gbit NOR Flash memory device from the GL-S series. This non-volatile memory offers a parallel interface with an access time of 120 ns and a write cycle time of 60 ns. The memory organization is 64M x 16, providing ample storage for demanding applications. Packaged in a compact 64-FBGA (9x9) format, it is designed for surface mounting and operates within a temperature range of -40°C to 85°C. This component is suitable for use in automotive, industrial, and communication systems where reliable, high-density flash storage is critical. The device supports a wide supply voltage range of 1.65V to 3.6V, ensuring compatibility with various system architectures.
Additional Information
Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 64-LBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR |
| Memory Format | FLASH |
| Supplier Device Package | 64-FBGA (9x9) |
| Write Cycle Time - Word, Page | 60ns |
| Memory Interface | Parallel |
| Access Time | 120 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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