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S29GL01GS12DHVV10

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S29GL01GS12DHVV10

IC FLASH 1GBIT PARALLEL 64FBGA

Manufacturer: Infineon Technologies

Categories: Memory

Quality Control: Learn More

Infineon Technologies S29GL01GS12DHVV10 is a 1Gbit NOR Flash memory device within the GL-S series. This non-volatile memory component features a parallel interface with an access time of 120 ns. Its organization is 64M x 16 bits, and it operates from a supply voltage range of 1.65V to 3.6V. The device supports a word write cycle time of 60 ns. Packaged in a 64-FBGA (9x9) surface-mount configuration, it is rated for operation across an industrial temperature range of -40°C to 105°C. This memory solution is suitable for demanding applications in automotive, industrial, and communication infrastructure sectors requiring robust and reliable data storage.

Additional Information

Series: GL-SRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case64-LBGA
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply1.65V ~ 3.6V
TechnologyFLASH - NOR
Memory FormatFLASH
Supplier Device Package64-FBGA (9x9)
Write Cycle Time - Word, Page60ns
Memory InterfaceParallel
Access Time120 ns
Memory Organization64M x 16
ProgrammableNot Verified

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